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| L/S BAND MEDIUM POWER GaAs MESFET NE6501077 FEATURES * HIGH OUTPUT POWER: 10 W * HIGH LINEAR GAIN: 10.5 dB * HIGH EFFICIENCY: 40% * INDUSTRY STANDARD PACKAGING ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) SYMBOLS VDSX VGDX VGSX IDS IGS PT TCH TSTG PARAMETERS Drain to Source Voltage Gate to Drain Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature UNITS V V V A mA W C C RATINGS 15 -18 -12 9.0 50 50 175 -65 to +175 DESCRIPTION The NE6501077 is a medium power GaAs MESFET designed for up to a 10 W output stage or as a driver for high power devices. The device has no internal matching and can be used from UHF frequencies up to 3.0 GHz. The chips used in this series offer superior reliability and consistent performance for which NEC microwave semiconductors are known. The NE6501077 transistors are manufactured to NEC's stringent quality assurance standards to ensure highest reliability and consistent superior performance. OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 77 17.50.5 14.3 1.0 0.1 GATE SOURCE RECOMMENDED OPERATING LIMITS SYMBOLS VDS TCH GCOMP RG PARAMETERS Drain to Source Voltage Channel Temperature Gain Compression Gate Resistance UNITS MIN V C dB TYP MAX 10 10 130 3.0 100 2.5 6.350.4 R1.25, 2 PLACES DRAIN +0.06 0.1 -0.02 8.90.4 3.8 MAX 1.0 4.0 MIN BOTH LEADS 2.26 0.4 0.2 MAX ELECTRICAL CHARACTERISTICS (TC PART NUMBER PACKAGE OUTLINE SYMBOLS CHARACTERISTICS Power Out at Fixed Input Power Linear Gain Power Added Efficiency Drain Source Current Saturated Drain Current Pinch-off Voltage Transconductance Thermal Resistance = 25C) NE6501077 77 UNITS dBm dB % A A V mS C/W 2.0 -3.5 MIN 39.0 9.5 TYP 39.5 10.5 40 2.0 4.5 -2.0 2600 2.5 3.0 7.0 -0.5 MAX TEST CONDITIONS PIN = 31.0 dBm f = 2.3 GHz VDS = 10 V; IDSQ = 1A RG = 100 VDS = 2.5 V; VGS = 0 V VDS = 2.5 V; IDS = 15 mA VDS = 2.5 V; IDS = 2 A Channel to Case Functional Characteristics POUT GL ADD IDS Electrical DC Characteristics IDSS VP gm RTH California Eastern Laboratories NE6501077 TYPICAL SCATTERING PARAMETERS (TA = 25C) j 50 j 25 S11 4.05 GHz S22 4.05 GHz j 100 +120 S21 0.05 GHz +90 +60 j10 +150 +30 0 S22 0.05 GHz 180 S21 4.05 GHz S12 0.05 GHz S12 4.05 GHz 0 -j 10 -150 -30 -j 25 -j 50 S11 0.05 GHz -j 100 -120 -90 -60 S21 MAG: 4.0 / DIV., 20.0 FS S12 MAG: 0.02 / DIV., 0.1 FS VDS = 10.0 V, IDS = 1000 mA FREQUENCY (GHz) 0.05 0.10 0.20 0.25 0.40 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 MAG 0.984 0.974 0.970 0.973 0.971 0.969 0.968 0.976 0.968 0.962 0.952 0.953 0.954 S11 ANG -76.400 -115.700 -146.600 -154.100 -166.400 -170.700 176.000 167.400 159.700 151.500 143.100 134.700 125.200 MAG 18.696 12.798 7.261 5.934 3.794 3.049 1.582 1.124 0.894 0.778 0.705 0.674 0.673 S21 ANG 140.100 120.500 103.200 98.700 90.100 86.800 72.400 60.100 47.600 35.000 21.800 8.700 -5.500 MAG 0.006 0.006 0.007 0.008 0.008 0.008 0.010 0.015 0.018 0.024 0.031 0.039 0.051 S12 ANG 23.700 28.600 22.000 21.500 25.900 26.100 35.500 39.700 41.500 37.500 29.500 21.300 12.000 MAG S22 ANG -0.320 0.036 0.212 0.251 0.488 0.593 0.979 0.874 1.088 1.081 1.100 0.940 0.761 0.812 -177.700 0.840 -178.100 0.857 179.600 0.862 178.600 0.862 176.400 0.862 175.500 0.856 169.900 0.865 165.100 0.850 158.700 0.850 151.700 0.836 144.300 0.825 137.300 0.800 130.400 K MAG1 (dB) 34.936 33.290 30.159 28.703 26.760 25.811 21.992 18.747 15.156 13.368 11.639 12.376 11.204 Note: 1. Gain Calculations: MAG = |S21| |S12| (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) * Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE 01/14/2000 |
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